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供應日立IGBT模塊41A296305ECP2

供應日立IGBT模塊41A296305ECP2
北京京誠宏泰科技
ABB的 IGBT功率模塊為電壓從1700伏特至6500伏特的單一IGBT，雙/橋臂式IGBT，斬波和雙二極管模塊。大功率的HiPak IGBT模塊具備軟開關低損耗和高極限較寬的SOA兩大特點。

產品型號：MBN1200D25B
廠商性質：經銷商
更新時間：2024-01-19
訪問量：6410

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詳細介紹

供應日立IGBT模塊41A296305ECP2

北京京誠宏泰科技有限公司原裝正品現貨供應日立IGBT模塊41A296305ECP2

日立IGBT特點：

耐熱疲勞耐量大
快恢復開關和低損耗IGBT模塊
通過高速軟恢復二極管減少噪音
通過低輸入電容MOS門極實現低功率驅動
可靠性高、耐久性高

日立IGBT技術

Trench	Trench Gate 降低Vce（sat）
LiPT	Low Injection Punch Through 減少開關損耗
sLiPt	Soft Low Injection Punch Through 低噪音，降低峰值電壓
HiGT	High Conductivity IGBT 降低Vce（sat）

北京京誠宏泰科技有限公司原裝正品現貨

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	1200	MBN1200E17D (PDF format, 293kBytes) (2013/03/01)		M
	1600	MBN1600E17D (PDF format, 594kBytes) (2013/03/01)		M
	1800	MBN1800E17DD (PDF format, 679kBytes) (2013/03/01)	Soft diode	M
	2400	MBN2400E17D (PDF format, 282kBytes) (2014/08/07)		M
2in1 IGBT	600	MBM600E17D (PDF format, 512kBytes) (2012/8/28)		M	2in1 Application Note (PDF format, 248kBytes)
	1200	MBM1200E17D (PDF format, 589kBytes) (2013/03/01)		M	2in1 Application Note (PDF format, 248kBytes)
	600	MBM600F17D (PDF format, 1.02MBytes) (2013/03/01)	Direct liquid cool	M	technical paper (PDF format, 163kBytes)*2 2in1 Application Note (PDF format, 248kBytes)
Chopper	1200	MBL1200E17D (PDF format, 325kBytes) (2013/03/01)		M
2in1 Diode	900	MDM900E17D (PDF format, 301kBytes) (2013/03/01)		M
2in1 Diode	1200	MDM1200E17D (PDF format, 305kBytes) (2013/03/01)		M

*1北京京誠宏泰科技有限公司原裝正品現貨

M:Mass production, W:Working sample, D:Discontinued

The first publication of the papers was at PCIM Europe Conference2010.

1700V E-Version

Low VCE(sat)
Soft switching

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	1200	MBN1200E17E (PDF format, 679kBytes)		M
1in1 IGBT	1800	MBN1800E17E (PDF format, 827kBytes)		M

M:Mass production, W:Working sample, D:Discontinued

1700V F-Version

Advanced Trench HiGT - sLiPT
Low VCE(sat)
Soft switching
Low spike voltage

Package	IC(A)	Type Name (Update)	Status*1	Application Note
1in1 IGBT	1600	MBN1600E17F (PDF format，459kBytes) (2015/3/10)	M	technical paper (PDF format, 382kBytes)*2
	2400	MBN2400E17F (PDF format, 436kBytes) (2012/11/30)	W	technical paper (PDF format, 382kBytes)*2
	3600	MBN3600E17F (PDF format, 408kBytes) (2015/3/10)	M	technical paper (PDF format, 382kBytes)*2
2in1 IGBT	800	MBM800E17F (PDF format，338kBytes) (2015/10/09)	W	technical paper (PDF format, 382kBytes)*2 2in1 Application Note (PDF format, 248kBytes)
2in1 IGBT	1200	MBM1200E17F (PDF format，771kBytes) (2015/07/29)	M	technical paper (PDF format, 382kBytes)*2 2in1 Application Note (PDF format, 248kBytes)
Chopper	1200	MBL1200E17F (PDF format，768kBytes) (2015/10/09)	M	technical paper (PDF format，382kBytes)*2
Chopper	1600	MBL1600E17F (PDF format，618kBytes) (2015/10/09)	M	technical paper (PDF format，382kBytes)*2

MBN1200E25C 北京京誠宏泰科技有限公司原裝正品現貨

3300V A-Version

Standard 2nd Generation

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 Diode	1200	MDN1200D33 (PDF形式, 170kBytes)		M

M:Mass production, W:Working sample, D:Discontinued

3300V C-Version

Standard 3rd generation Planer IGBT

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	1200	MBN1200E33C (PDF形式, 390kBytes)		M
Chopper	800	MBL800E33C (PDF形式, 504kBytes)		M

M:Mass production, W:Working sample, D:Discontinued

3300V D-Version

Planer IGBT - LiPT
Low switching loss

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	800	MBN800E33D (PDF形式, 409kBytes) (2013/03/01)		M
	800	MBN800E33D-AX (PDF形式, 316kBytes) (2013/07/01)	Low recovery loss For high frequency application	M
	1200	MBN1200E33D (PDF形式, 277kBytes) (2013/03/01)		M
	1200	MBN1200H33D (PDF形式, 335kBytes) (2013/03/01)	High isolation package	M
2in1 IGBT	400	MBM400E33D-MFR (PDF形式，702kBytes) (2015/10/09)	Ultra low switching loss and recovery loss For high frequency application	M	technical paper *2 (PDF形式、724kBytes) 2in1 Application Note (PDF形式、248kBytes)
Chopper	400	MBL400E33D (PDF形式, 695kBytes) (2013/03/01)		M
Chopper	800	MBL800E33D (PDF形式, 701kBytes) (2013/03/01)		M
2in1 Diode	800	MDM800E33D (PDF形式, 185kBytes) (2013/03/01)		M
2in1 Diode	1200	MDM1200E33D (PDF形式, 224kBytes) (2013/03/01)		M

M:Mass production, W:Working sample, D:Discontinued

The first publication of the papers was at PCIM Europe Conference 2012.

3300V E-Version

Planer HiGT - sLiPT
Low VCE(sat)
Soft switching

Package	IC(A)	Type Name (Update)	Status*1
1in1 IGBT	800	MBN800E33E (PDF形式, 591kBytes) (2012/11/30)	M
1in1 IGBT	1200	MBN1200E33E (PDF形式，468kBytes) (2015/03/10)	M
Chopper	800	MBL800E33E (PDF形式, 443kBytes) (2013/03/01)	M

M:Mass production, W:Working sample, D:Discontinued

3300V E2-Version

Fine Planer HiGT - sLiPT
Low VCE(sat)
Soft switching

Package	IC(A)	Type Name (Update)	Status*1	Application Note
1in1 IGBT	1000	MBN1000E33E2 (PDF形式, 286kBytes) (2013/07/01)	M
1in1 IGBT	1500	MBN1500E33E2 (PDF形式, 353kBytes) (2013/07/01)	M
2in1 IGBT	500	MBM500E33E2-R (PDF形式, 559kBytes) (2014/08/07)	M	2in1 Application Note (PDF形式, 248kBytes)
Chopper	1000	MBL1000E33E2-B (PDF形式, 227kBytes) (2012/11/30)	M

M:Mass production, W:Working sample, D:Discontinued

3300V E3-Version

Fine Planer HiGT - sLiPT
Soft switching
Low spike voltage
For large Ls circuit, series connection

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	1500	MBN1500E33E3 (PDF形式, 371kBytes) (2013/07/01)		M
2in1 IGBT	250	MBM250H33E3 (PDF形式, 502kBytes) (2015/07/29)	High isolation package	M

M:Mass production, W:Working sample, D:Discontinued

3300V F-Version

Advanced Trench HiGT - sLiPT
Low VCE(sat)
High current rating
RoHS compliance

Package	IC(A)	Type Name (Update)	Feature	Status*1	Application Note
1in1 IGBT	1200	MBN1200F33F (PDF形式，698kBytes) (2015/05/15)		M	technical paper (PDF形式, 388kBytes)*2
1in1 IGBT	1800	MBN1800F33F (PDF形式，661kBytes) (2015/05/15)		M	technical paper (PDF形式, 724kBytes)*3

4500V D-Version

Planer IGBT - LiPT
Low switching loss

Package	IC(A)	Type Name (Update)	Status*1
1in1 IGBT	600	MBN600E45A (PDF形式, 290kBytes)	M
1in1 IGBT	900	MBN900D45A (PDF形式, 298kBytes)	M
2in1 Diode	600	MDM600E45A (PDF形式, 198kBytes)	M
2in1 Diode	900	MDM900E45A (PDF形式, 158kBytes)	D

M:Mass production, W:Working sample, D:Discontinued

4500V E2-Version

Fine Planer HiGT - sLiPT
Low VCE(sat)
Soft switching

Package	IC(A)	Type Name (Update)	Feature	Status*1
1in1 IGBT	800	MBN800H45E2 (PDF形式，468kBytes) (2015/05/15)	High isolation package	M
1in1 IGBT	1200	MBN1200H45E2 (PDF形式，543kBytes) (2015/03/10)	High isolation package	M
2in1 Diode	800	MDM800H45E2 (PDF形式，425kBytes) (2015/10/09)	High isolation package	M
2in1 Diode	1200	MDM1200H45E2 (PDF形式, 291kBytes) (2013/07/01)	High isolation package	M

M:Mass production, W:Working sample, D:Discontinued

4500V E2-H-Version

Fine Planer HiGT - sLiPT
Low switching loss

Package	IC(A)	Type Name (Update)	Feature	Status*1
1in1 IGBT	800	MBN800H45E2-H (PDF形式，477kBytes) (2015/05/15)	High isolation package	M
1in1 IGBT	1200	MBN1200H45E2-H (PDF形式，577kBytes) (2015/03/10)	High isolation package	M
2in1 IGBT	200	MBM200H45E2-H (PDF形式，528kBytes) (2015/03/10)	High isolation package	M
2in1 Diode	800	MDM800H45E2-H (PDF形式，252kBytes) (2013/07/01)	High isolation package	W
2in1 Diode	1200	MDM1200H45E2-H (PDF形式，227kBytes) (2015/03/10)	High isolation package	M

M:Mass production, W:Working sample, D:Discontinued

4500V F-Version

Advanced Trench HiGT - sLiPT
Low VCE(sat)
High current rating
RoHS compliance

Package	IC(A)	Feature	Application Note
1in1 IGBT	1000	High isolation package	technical paper*2 (PDF形式, 1400kBytes)
1in1 IGBT	1500	High isolation package	technical paper*2 (PDF形式, 1400kBytes)

6500V E2-Version

Fine Planer HiGT - sLiPT
Low VCE(sat)
Soft switching

Package	IC(A)	Type Name (Update)	Feature	Status*1
1in1 IGBT	500	MBN500H65E2 (PDF形式, 336kBytes) (2013/07/01)	High isolation package	M
1in1 IGBT	750	MBN750H65E2 (PDF形式，430kBytes) (2015/03/10)	High isolation package	M
2in1 Diode	500	MDM500H65E2 (PDF形式, 255kBytes) (2013/07/01)	High isolation package	M
2in1 Diode	750	MDM750H65E2 (PDF形式, 250kBytes) (2013/07/01)	High isolation package	M

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供應日立IGBT模塊41A296305ECP2
北京京誠宏泰科技
ABB的 IGBT功率模塊為電壓從1700伏特至6500伏特的單一IGBT，雙/橋臂式IGBT，斬波和雙二極管模塊。大功率的HiPak IGBT模塊具備軟開關低損耗和高極限較寬的SOA兩大特點。

1700V E-Version

1700V F-Version

3300V A-Version

3300V C-Version

3300V D-Version

3300V E-Version

3300V E2-Version

3300V E3-Version

3300V F-Version

4500V D-Version

4500V E2-Version

4500V E2-H-Version

4500V F-Version

6500V E2-Version

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供應日立IGBT模塊41A296305ECP2北京京誠宏泰科技ABB的 IGBT功率模塊為電壓從1700伏特至6500伏特的單一IGBT，雙/橋臂式IGBT，斬波和雙二極管模塊。大功率的HiPak IGBT模塊具備軟開關低損耗和高極限較寬的SOA兩大特點。

1700V E-Version

1700V F-Version

3300V A-Version

3300V C-Version

3300V D-Version

3300V E-Version

3300V E2-Version

3300V E3-Version

3300V F-Version

4500V D-Version

4500V E2-Version

4500V E2-H-Version

4500V F-Version

6500V E2-Version

留言框

產品：

您的單位：

您的姓名：

聯系電話：

常用郵箱：

省份：

詳細地址：

補充說明：

驗證碼：

供應日立IGBT模塊41A296305ECP2
北京京誠宏泰科技
ABB的 IGBT功率模塊為電壓從1700伏特至6500伏特的單一IGBT，雙/橋臂式IGBT，斬波和雙二極管模塊。大功率的HiPak IGBT模塊具備軟開關低損耗和高極限較寬的SOA兩大特點。